N-Series Resistors • IMS
page-template,page-template-full_width,page-template-full_width-php,page,page-id-15116,ajax_fade,page_not_loaded,boxed,,qode-title-hidden,qode-content-sidebar-responsive,qode-theme-ver-11.1,qode-theme-bridge,wpb-js-composer js-comp-ver-5.1.1,vc_responsive



Thick Film High Power Chip Resistors and Terminations on Aluminum Nitride

The ims N-Series thick film high power chip resistors and chip terminations on aluminum nitride are ideal for most applications requiring high thermal conductivity in a small size package. AlN is an ideal replacement for BeO with it’s high power dissipation and no enviromental or health hazards. Thick film technology provides a stable resistive element at a very affordable price.


• High stability thick film resistive element
• AlN substrate material
• Standard resistance range is 10Ω to 2kΩ, other values available*
• Standard tolerance is 2% or 5%, other tolerances available*
• Operating temperature: -55°C to +155°C
• Maximum working voltage: E=√PR
• Available in bulk or tape and reel*

* Consult factory